Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis
作者： Davide Garetto , Yoann Mamy Randriamihaja , Denis Rideau , Alban Zaka , Alexandre Schmid
关键词: MOSFET 、 Oxide 、 Conductance 、 Materials science 、 Biasing 、 Transistor 、 Capacitance 、 Silicon 、 Analytical chemistry 、 Optoelectronics 、 Electrical impedance
摘要: Complementary MOS device electrical performances are considerably affected by the degradation of oxide layers and Si/SiO2 interfaces. A general expression for electrically stressed impedance has been derived applied within nonradiative multiphonon theory carrier capture/emission at defects. The capacitance conductance aged field-effect transistor oxides, their dependences on bias voltage, temperature, stress conditions have investigated.
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