Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
作者： J. D. Perkins , A. Mascarenhas , Yong Zhang , J. F. Geisz , D. J. Friedman
DOI: 10.1103/PHYSREVLETT.82.3312
关键词: Reduction (recursion theory) 、 Crystallography 、 Atomic physics 、 Nitrogen 、 Level repulsion 、 Spectral line 、 Content (measure theory) 、 Band gap 、 Materials science 、 Electronic structure 、 Valence band
摘要: We report electroreflectance spectra for a series of GaAs{sub 1{minus}x} N{sub x} samples with x{lt}0.03 . For all samples, the fundamental band gap transition (E{sub 0}) and from spin-orbit split-off valence 0}+{Delta}{sub are observed. x{ge}0.008 , an additional +}) is With increasing nitrogen content, increase in E{sub +} linear in, nearly equal to, reduction indicative nitrogen-induced level repulsion. The directly observed may arise either nitrogen-related resonant or disorder-activated indirect transition. {copyright} {ital 1999} American Physical Society}
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