Laser diagnostic studies of particulate contamination generated by etching plasmas
作者： G.S. Selwyn
DOI: 10.1109/PLASMA.1989.166265
关键词: Reactive-ion etching 、 Light scattering 、 Nucleation 、 Etching (microfabrication) 、 Analytical chemistry 、 Ion 、 Atomic physics 、 Plasma 、 Particle 、 Plasma etching 、 Materials science
摘要: Using laser light scattering as an in-situ probe of particulate contamination, it has been shown that certain silicon etching plasmas can produce significant amounts contamination. In addition, using spatially resolved measurements, most particles are suspended at the sheath boundaries, a finding attributed to electrostatic charging. Further evidence for this unexpected result provided by simultaneous space and time measurements with measurement plasma negative ions. The parametric conditions favorable particle formation growth have identified. Generation is seen be strongly affected choice process feedgas, flow rate, pressure, presence exposed area etch substrate. Comparison ion laser-induced fluorescence suggests involvement ions in particulates. A mechanism nucleation growth, involving clustering products, >
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