Linear Increases in Carbon Nanotube Density Through Multiple Transfer Technique
作者： Max M. Shulaker , Hai Wei , Nishant Patil , J. Provine , Hong-Yu Chen
DOI: 10.1021/NL200063X
关键词: Substrate (electronics) 、 Optoelectronics 、 Density scaling 、 Carbon nanotube 、 Materials science 、 Wafer 、 Nanotechnology 、 Target surface 、 Drain current 、 Scaling law 、 Field-effect transistor
摘要: We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. perform multiple transfers, whereby we transfer CNTs from several growth wafers onto same target surface, thereby linearly increasing on substrate. This process, called of nanotubes through sacrificial layers, is highly scalable, and demonstrate linear scaling up 5 transfers. also that this results in an ideal drain−source currents field effect transistors (CNFETs). Experimental can be improved 2 8 CNTs/μm, accompanied by CNFET current 4.3 17.4 μA/μm.
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