High Input Impedance Cryogenic RF Amplifier for Series Nanowire Detector
作者： Chao Wan , Zhou Jiang , Lin Kang , Peiheng Wu
DOI: 10.1109/TASC.2017.2677519
关键词: Amplifier 、 Heterojunction bipolar transistor 、 Instrumentation amplifier 、 Optoelectronics 、 Current source 、 FET amplifier 、 Materials science 、 Input impedance 、 Buffer amplifier 、 RF power amplifier
摘要: We designed a high input impedance cryogenic radio frequency amplifier to scale up series array of superconducting nanowire single photon detectors for resolving wide range numbers. The monolithic integrated chip was fabricated by Tower Jazz's 0.18-μm SiGe BiCMOS process. Temperature dependence the main components, such as silicon germanium heterojunction bipolar transistor, proportional current source, and poly resistor, were characterized estimate quiescent point at environment. At 4.2 K, with 6-kΩ impedance, 20-dB gain, 4 MHz 1-GHz bandwidth, 0.9-mW power dissipation obtained.
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