Solvent Assisted Rinsing: Stability/Instability of Ultrathin Polymer Residual Layer
作者： A. Beena Unni , G. Vignaud , J. K. Bal , N. Delorme , T. Beuvier
DOI: 10.1021/ACS.MACROMOL.5B02435
关键词: Thin film 、 Polystyrene 、 van der Waals force 、 Polymer chemistry 、 Solvent 、 Polymer 、 Wafer 、 Dewetting 、 Materials science 、 Chemical engineering 、 Oxide
摘要: In the field of miniaturized devices one basic but unreciprocated problems is instability induced dewetting in polymer thin films. The significance choosing solvents for deconstructing films along with their stability investigated by rinsing supported polystyrene on silicon wafer native oxide four different solvents, such as toluene, chloroform, tetrahydrofuran, and acetone. are chosen according to relative energy difference polymer. remnant thickness morphology residual subject solvent characterized. Fine tuning time leads a progressive decrement film that allows investigation resulting from leaching. these found be dependent various interactions involved system van der Waals dispersive forces, steric repulsions, acid–base interactions, etc. Based solvent...
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