Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As.

作者: J. Mašek , J. Kudrnovský , F. Máca , B. L. Gallagher , R. P. Campion

DOI: 10.1103/PHYSREVLETT.98.067202

关键词: Magnetic semiconductorExchange interactionAb initio quantum chemistry methodsCondensed matter physicsCurie temperatureMaterials scienceImpuritySemiconductorAnalytical chemistryStoichiometryFerromagnetism

摘要: We propose to replace Ga in (Ga, Mn) As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor …

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