Semiconductor device and ultrasonic diagnostic apparatus using the same
作者： Junichi Sakano , Kenji Hara
DOI:
关键词: Engineering 、 Optical switch 、 Crossbar switch 、 DIP switch 、 Power semiconductor device 、 Constant power circuit 、 Load line 、 Zero cross circuit 、 Analogue switch 、 Electrical engineering
摘要: The present invention provides a semiconductor device of bi-directional analog switch having high linearity and low electric power loss. An ultrasonic diagnostic apparatus degree detection accuracy, comprising the device, is also provided. A switch, circuit capable switching ON or OFF bi-directionally, built-in driving circuits for circuit, wherein connected to first second supplies, supply voltage higher than maximum signal applied an input/output terminal lower minimum comprises Zener diode p-type MOSFET in series between circuit.
lens.org 参考文章(8)
Roy Alan Hastings, Low-current compliance stack using nondeterministically biased Zener strings ,(2002)
Yasushi Hasegawa, Power control photocoupler and electronic device in which the power control photocoupler is used ,(2006)
Ty R Mcnutt, Eric Stewart, Marc E Sherwin, Rowland C Clarke, Campen Stephen Van, Ranbir Singh, Improved power switching transistors ,(2008)
Kingo Ota, Shoichi Okuda, Switching circuit having two MOS-FETS ,(2006)
Robert Gideon Wodnicki, Kjell Kristoffersen, Bruno Hans Haider, Reconfigurable ultrasound array with low noise cw processing ,(2009)
Katsunori Ueno, 勝典 上野, Overvoltage protective function built-in mos semiconductor apparatus and method of manufacturing the same ,(2007)