Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO 2 -Si-SiO 2 -Cu nanoplasmonic waveguides
作者： Shiyang Zhu , G. Q. Lo , D. L. Kwong
DOI: 10.1364/OE.20.005867
关键词: Silicon 、 Permittivity 、 Materials science 、 Insertion loss 、 Extinction ratio 、 Waveguide 、 Optoelectronics 、 Silicon on insulator 、 Power dividers and directional couplers 、 Optics 、 Photonic integrated circuit
摘要: We report systematic results on the development of horizontal Cu-SiO2-Si-SiO2-Cu nanoplasmonic waveguide components operating at 1550-nm telecom wavelengths, including straight waveguides, sharp 90° bends, power splitters, and Mach-Zehnder interferometers (MZIs). Owing to relatively low loss for propagating (~0.3 dB/µm) sharply bending (~0.73 dB/turn), various ultracompact splitters MZIs are experimentally realized a silicon-on-insulator (SOI) platform using standard CMOS technology. The demonstrated exhibit excess good performance such as high extinction ratio ~18 dB normalized insertion ~1.7 dB. experimental these devices agree well with those predicted from numerical simulations suitable Cu permittivity data.
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