Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

摘要: Si nanowires grow rapidly by chemical vapor deposition on Ti-containing islands surfaces when an abundant supply of Si-containing gaseous precursor is available. The density wires approximately the same as nucleating surface, although at least two different types appear to correlate with very wire growth rates. For conditions used, a minority long, defect-free form, along more numerous containing defects. Energy-dispersive x-ray spectroscopy shows that nanoparticles remain tip growing wires. estimated diffusion coefficient in TiSi2 consistent catalyzing nanoparticle remaining solid phase during nanowire growth.