Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor
作者： Genquan Han , Bin Zhao , Yan Liu , Hongjuan Wang , Mingshan Liu
DOI: 10.1016/J.SPMI.2015.08.027
关键词: Performance enhancement 、 Subthreshold swing 、 Heterojunction 、 Modulation 、 Voltage 、 Quantum tunnelling 、 Tunneling field effect transistor 、 Optoelectronics 、 N channel 、 Materials science
摘要: Abstract We design a heterojunction-enhanced n-channel tunneling field effect transistor (HE-TFET) with an InAs/In 1− x Ga As heterojunction located in channel region distance of L T-H from source/channel junction. The influence on the performance HE-TFETs is investigated by simulation. Compared InAs homo-NTFET, positive shift onset voltage, steeper subthreshold swing (SS), and enhanced on-state current I ON are achieved HE-NTFETs, which attributed to modulation band-to-band tunneling. At supply voltage 0.3 V, 0.9 0.1 HE-NTFET 6 nm demonstrates enhancement 119.3% comparison homo device. Furthermore, impact composition HE-NTFETs studied. increases, average SS characteristics improved, while drive devices reduced due increasing barrier.
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