Investigation of Fermi-level pinning at silicon/porous-silicon interface by vibrating capacitor and surface photovoltage measurements
作者： J. Mizsei , J.A. Shrair , I. Zólomy
DOI: 10.1016/J.APSUSC.2004.05.110
关键词: Band bending 、 Optoelectronics 、 Analytical chemistry 、 Fermi level 、 Materials science 、 Porous silicon 、 Silicon 、 Rectangular potential barrier 、 Surface photovoltage 、 Work function 、 Charge carrier
摘要: … The backside of the semiconductor is also connected to the ground, thus its Fermi-level … surface photovoltage by vibrating capacitor with static light and static capacitor with pulsed light …
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