Fundamental and applied work on glow discharge material

作者: Walter E. Spear , Peter G. LeComber

DOI: 10.1007/3-540-12807-7_17

关键词: HumanitiesAmorphous semiconductorsGrande bretagnePhysics

摘要: Le silicium amorphe (Si-a) est prepare par decomposition du silane dans la decharge luminescente aux radiofrequences. Revue des proprietes et applications. On analyse densite d'etats bande de mobilite interdite l'effet champ techniques plus recentes. La faible donne valeur electronique Si-a l'etude fondamentale appliquee. Comme application il y a le transistor effet etat (commutation, affichage adressable, etc.). Une autre propriete interessante possibilite dopage controle impuretes substitutionnelles phase gazeuse; cette egalement liee interdite. Cette permet realisation jonctions amorphes. Apres un expose technique luminescente, systemes depot l'echelle laboratoire industrielle, considerations sur vitesse plasma silane, on traite successivement tous ces aspects

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