The combined effect of acceleration voltage and incident beam orientation on the characteristic X-ray production in thin crystals
作者： Kannan M. Krishnan , Peter Rez , Gareth Thomas , Yasuhiro Yokota , H. Hashimoto
DOI: 10.1080/01418638608244292
关键词: Microanalysis 、 Incident beam 、 Spinel 、 Acceleration voltage 、 Atomic physics 、 Characteristic X-ray 、 Scattering 、 Materials science 、 Critical voltage 、 Optics 、 Voltage
摘要: Abstract A systematic experimental study has been carried out to determine the combined effect of acceleration voltage and incident beam orientation on characteristic X-ray production in thin crystals. For MgAl2O4 it shown that dependence undergoes a reversal character above particular voltage, which is referred now as ‘inversion’ voltage. This inversion experimentally determined be ∼270kV for compounds with spinel structure agreement theoretical predictions based highly localized scattering model Further, combination calculations, this ‘inversion voltage’ behaviour different from conventional critical effect. From microanalysis point view, order obtain an analysis independent or essential syst...
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