Annealing behavior of (7 × 7) domain boundaries on Si(111) observed by secondary electron imaging
作者： N. Aizawa , Y. Homma
DOI: 10.1016/0039-6028(95)00687-7
关键词: Annealing (metallurgy) 、 Imaging technique 、 Secondary electrons 、 Transition temperature 、 Molecular physics 、 Microscopy 、 Scanning electron microscope 、 Silicon 、 Chemistry 、 Secondary emission 、 Crystallography
摘要: Abstract The rearrangement of (7 × 7) domain boundaries on Si(111) surfaces during annealing has been investigated by using a secondary electron imaging technique: scanning surface microscopy. shape the changes for several minutes at 8°C below 7)−(1 1) transition temperature in order to form stabilized structures. are 〈110〉 directions, reflecting structures unit. This is result minimizing energy boundaries, which consisted (1 fluctuating with size units temperature.
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