Low-temperature dielectric behavior of disordered and ordered langasite family single crystals LGS, LGT, SNGS and STGS

作者: E. Smirnova , A. Sotnikov , H. Schmidt , M. Weihnacht , S. Sakharov

DOI: 10.1016/J.JPCS.2015.05.014

关键词: HeliumDielectricMaterials scienceElectronic materialsCrystal structureDielectric permittivityCondensed matter physicsOptics

摘要: Abstract Dielectric measurements of disordered La 3 Ga 5 SiO 14 (LGS), 5,5 Ta 0,5 O (LGT) and ordered Sr NbGa Si 2 (SNGS), TaGa (STGS) single crystals the langasite family performed at frequencies from 10 Hz to 1 MHz temperatures between 4.2 300 K are reported. Temperature dependences dielectric permittivity e 33 11 obtained. It is shown that in LGS LGT exhibits incipient ferroelectric-like behavior. SNGS STGS demonstrate ordinary temperature as decreases down helium temperatures.

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