作者: Subramani Shanmugan , Mutharasu Devarajan , Kamarulazizi Ibrahim
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.488-489.76
关键词: Thin film 、 Shape analysis (digital geometry) 、 Conductivity 、 Chemical composition 、 Analytical chemistry 、 Materials science 、 Doping 、 Diffraction 、 Cadmium telluride photovoltaics
摘要: Sb layered Te/Cd thin films have been prepared by using Stacked Elemental Layer (SEL) method. The presence of mixed phases (CdTe and Sb2Te3) in the was confirmed x-ray diffraction technique. calculated structural parameters demonstrated feasibility doping via SEL topographical electrical studies synthesized depicted influence on both surface morphology conductivity. values conductivity annealed were between 2 x 10-3 175 10-2 Scm-2. A desired chemical composition from spectrum shape analysis energy dispersive x-ray.