The Andreev tunneling behaviors in the FM/QD/SC system with intradot spin-flip scattering

作者: Cheng-Zhi Ye , Wei-Tao Lu , Hua Jiang , Chang-Tan Xu

DOI: 10.1016/J.PHYSE.2015.08.022

关键词: Spin-flipFermi energyAndreev reflectionCondensed matter physicsPhysicsSpin polarizationSpintronicsResonance (particle physics)Quantum tunnellingScattering

摘要: Abstract The resonant behaviors of spin-dependent linear AR conductance, the current, electron occupation number and spin accumulation in QD are theoretically investigated FM/QD/SC system with intradot spin-flip scattering. novel conductance versus Fermi energy revealed, which rather different from dot's level case [Cao et al., Phys. Rev. B 70 (2004) 235341]. It is proved that split peak can be induced by competition between coupling strengths to FM SC leads, scattering, gate voltage. number, widths, distance peaks could controlled tuning relevant parameters. resonance current take place only when lines up right lead chemical potential blows left potential. magnitude depends on levels involved Andreev tunneling process. also scattering suppress effectively, induce polarization simultaneously. results make us understand better fundamental this system, useful for design spintronic devices.

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