Many-Body Effects on Temperature-Dependence of the Interband Absorption in Quantum Wells

摘要: A theory, which includes many-body effects, is presented for the interband absorption in a pseudomorphic Ga, -,Al,,As/In,Ga, -,As/GaAs modulation-doped quantum well. The electron-electron interaction degenerate Fermi sea calculated self-consistent Hartree approximation. In addition, binding energy within an electron-hole pair included ladder approximation as vertex correction to response function. Due subband structure arising from quantization by well, there are different types of excitons associated with electrons and holes subbands. coupling between random-phase numerical results temperature dependence peaks at edge (low temperature) band (room compare well available experimental data was obtained electric-field modulated photoreflectance experiments. At low temperatures, theory shows that important modifications single-particle model. extracted fitting thermally broadened line shape spectrum. As consequence, electron density wells can be accurately determined means this contactless, nondestructive, rapid simple characterization method. Moreover, information on alloy composition, built-in electric field, interface stress also obtained.