Circuit and method for erasing EEPROM memory arrays to prevent over-erased cells
作者： Giovanni Santin
DOI:
关键词: EEPROM 、 Process (computing) 、 Electric field 、 Materials science 、 Reading (computer) 、 Voltage 、 Electrical engineering 、 Biasing 、 Flash (photography) 、 Energy (signal processing)
摘要: The device and process of this invention provide for eliminating reading errors caused by over-erased cells applying flash erasing pulses, then programming pulses to the an EEPROM array. are sufficient in strength over-erase cells. applied control gates have same voltages as those used program individual electric field adjacent floating is controlled a biasing voltage one source/drain regions controls energy level such that only enough charge transferred cause threshold positive values less than predetermined wordline select voltage.
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