Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches
作者： Andrei A. Muller , Matteo Cavalieri , Adrian M. Ionescu
DOI: 10.1063/5.0021942
关键词: Radio frequency 、 Resonance 、 Optoelectronics 、 Conductivity 、 Band-stop filter 、 Transition point 、 Insertion loss 、 Hysteresis 、 Transition temperature 、 Materials science
摘要: In this Letter, we report and investigate the temperature dependency of various radio frequency (RF) parameters for a fabricated reconfigurable bandstop filter with vanadium dioxide (VO2) switches measured up to 55 GHz. Here, insulator-to-metal (ITM) metal-to-insulator transition (MIT) hysteresis VO2 thin film influence on RF characteristics filters is analyzed from 25 °C 120 °C in heating cooling. The resonance maximum insertion loss (IL) stability sensitivity variations are explored. It noticed that increasing 50 °C (or decreasing it 120 °C) will result less than 1% fractional shift respect off frequencies. sharp DC conductivity level around temperatures translate into effects filters. On contrary, IL levels sensitive changes films temperature. A unique behavior reported when successively heating-up cooling-down, over below, respectively, VO2: exhibits completely different This suggests dependence design, practical use functions has take account history thermal increase or decrease device crossing IMT/MIT point.
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