Semiconductor manufacturing method and semiconductor manufacturing apparatus
作者： Shigemi Murakawa , Mitsuhiro Yuasa , Satoru Kawakami , Toshiaki Hongoh
DOI:
关键词: Oxide 、 Oxidizing agent 、 Semiconductor 、 Optoelectronics 、 Semiconductor device fabrication 、 Wafer 、 Insulator (electricity) 、 Nitriding 、 Silicon 、 Electronic engineering 、 Materials science
摘要: In an atmosphere of processing gas, on a wafer W consisting mainly silicon, through planar-array antenna RLSA 60 having plurality slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, oxygen and nitrogen implement therewith the surface direct oxidizing, nitriding, oxy-nitriding deposit insulator film 2 thickness 1 nm less in terms oxide film. A manufacturing method apparatus semiconductors that can successfully regulate quality interface between silicon substrate SiN form high short time be obtained.
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