Morphology, Electrical Performance and Potentiometry of PDIF-CN2 Thin-Film Transistors on HMDS-Treated and Bare Silicon Dioxide
作者： Fabio Chiarella , Mario Barra , Laura Ricciotti , Alberto Aloisio , Antonio Cassinese
DOI: 10.3390/ELECTRONICS3010076
关键词: Silicon dioxide 、 Voltage 、 Kelvin probe force microscope 、 Transistor 、 Nanotechnology 、 Thin-film transistor 、 Optoelectronics 、 Surface modification 、 Characterization (materials science) 、 Orders of magnitude (temperature) 、 Materials science
摘要: In this work, the electrical response of n-type organic field-effect transistors, achieved by evaporating PDIF-CN2 films on both bare and Hexamethyldisilazane (HMDS) treated SiO2 …
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