Method for manufacturing semiconductor device
作者： Hao Jing An , Shu Qiang
DOI:
关键词: Etching (microfabrication) 、 Thin oxide 、 Anti-reflective coating 、 Materials science 、 Reflection (mathematics) 、 Layer (electronics) 、 Substrate (electronics) 、 Photoresist 、 Semiconductor device 、 Optoelectronics
摘要: The invention relates to a method for manufacturing semiconductor device. comprises the following steps: providing substrate; forming front layer on successively thin oxide and high-etching-rate bottom antireflective coating layer; patterned photoresist coating; according layer, etching so as form an opening exposing removing exposed layer. According invention, in manufacture process of device, are formed substrate, such that problem reflection substrate when injection photoetching is carried out solved, damage caused avoided, performance device improved.
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