Field dependence of magnetoresistance in half-metallic manganite

作者: Zheng-Ming Zhang , Xing-Chen Zhao , Wei-Ping Zhou

DOI: 10.1051/EPJAP/2015150047

关键词: Condensed matter physicsMaterials scienceMagnetoresistanceManganiteCharge carrierFerromagnetismMagnetic fieldGrain boundaryElectrical resistivity and conductivityField dependence

摘要: Formular description of the magnetic field dependence resistivity is interest not only because its theoretical importance, but also it allows us to design magnetic-field-controlled devices. Using micromagnetic theory combined with charge carrier hopping and spin-polarized tunneling models, in half-metallic ferromagnet La 2/3 Sr 1/3 MnO 3 has been studied systematically. It shown that linearly dependent on a single grain. As for grain boundary (GB), namely spin transport across boundary, an exponential relationship low-field region. Finally we give analytical magnetoresistance formulas polycrystalline, which agree well experimental results.

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