Electrically programmable interconnect structure having a PECVD amorphous silicon element

摘要: In one method for forming amorphous silicon antifuses with significantly reduced leakage current, a film of is formed in antifuse via between two electrodes. The deposited using plasma enhanced chemical vapor deposition, preferably an silane-argon environment and at temperature 200 500 degrees C., or reactively sputtered variety reactive gases. another method, oxide layer placed layers. yet the layers about doped. embodiment, conductive, highly diffusible material either on under film. feature size thickness are selected to minimize further current while providing desired programming voltage. A also described field programmable gate array antifuses.