作者: Y. P. Chen , S. Sivananthan , J. P. Faurie
DOI: 10.1007/BF02817509
关键词: Chemistry 、 Electron diffraction 、 Crystallography 、 Cadmium telluride photovoltaics 、 Single domain 、 Inorganic compound 、 Thin film 、 Crystal 、 Tilt (optics) 、 Solid-state physics
摘要: Single domain CdTe(111)B has been grown on Si(001) substrates tilted 1o 2o, and 4o toward [110]. All the layers started with a double-domain structure, then transition from double- to single-domain was observed by reflection high energy electron diffraction. A microscopic picture of this is presented. We also measured tilt between Si(001). The result does not follow predicted currently existing model. new model mechanism growth New evidence indicates that optimizing substrate surface very crucial in improving crystal quality.