Structure of CdTe(111)B grown by MBE on misoriented Si(001)

作者: Y. P. Chen , S. Sivananthan , J. P. Faurie

DOI: 10.1007/BF02817509

关键词: ChemistryElectron diffractionCrystallographyCadmium telluride photovoltaicsSingle domainInorganic compoundThin filmCrystalTilt (optics)Solid-state physics

摘要: Single domain CdTe(111)B has been grown on Si(001) substrates tilted 1o 2o, and 4o toward [110]. All the layers started with a double-domain structure, then transition from double- to single-domain was observed by reflection high energy electron diffraction. A microscopic picture of this is presented. We also measured tilt between Si(001). The result does not follow predicted currently existing model. new model mechanism growth New evidence indicates that optimizing substrate surface very crucial in improving crystal quality.

参考文章(6)
Akitoshi Ishizaka, Yasuhiro Shiraki, Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE Journal of The Electrochemical Society. ,vol. 133, pp. 666- 671 ,(1986) , 10.1149/1.2108651
Haruo Nagai, Structure of vapor‐deposited GaxIn1−xAs crystals Journal of Applied Physics. ,vol. 45, pp. 3789- 3794 ,(1974) , 10.1063/1.1663861
E. Ligeon, C. Chami, R. Danielou, G. Feuillet, J. Fontenille, K. Saminadayar, A. Ponchet, J. Cibert, Y. Gobil, S. Tatarenko, Structure of (111) CdTe epilayers on misoriented (001) GaAs Journal of Applied Physics. ,vol. 67, pp. 2428- 2433 ,(1990) , 10.1063/1.345512
Robert Sporken, YP Chen, Sivalingam Sivananthan, MD Lange, JP Faurie, Current status of direct growth of CdTe and HgCdTe on silicon by molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 10, pp. 1405- 1409 ,(1992) , 10.1116/1.585876
Robert Sporken, MD Lange, JP Faurie, J Petruzzello, Molecular-beam epitaxy of CdTe on large area Si(100) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 1651- 1655 ,(1991) , 10.1116/1.585439