56 Gb/s Germanium Waveguide Electro-Absorption Modulator
作者： Srinivasan Ashwyn Srinivasan , Marianna Pantouvaki , Shashank Gupta , Hong Tao Chen , Peter Verheyen
关键词: Materials science 、 Optical modulator 、 Optoelectronics 、 Insertion loss 、 Electro-absorption modulator 、 Modulation 、 Silicon photonics 、 Diffusion capacitance 、 Optics 、 Waveguide (optics) 、 Photonics
摘要: We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in fully integrated Si photonics platform on 200 mm silicon-on-insulator wafers 220 nm top thickness. Wide open eye diagrams are demonstrated at 1610 nm operation wavelength for nonreturn-to-zero on-off keying (NRZ-OOK) modulation data rates as high 56 Gb/s. Dynamic extinction ratios up to 3.3 dB obtained by applying drive voltages of 2 V peak-to-peak, along an optical insertion loss below 5.5 dB. has low junction capacitance just 12.8 fF, resulting 12.8 fJ/bit dynamic and ∼1.2 mW static power consumption typical operating conditions. Wafer-scale performance presented confirm the manufacturability device. shows great potential realizing high-density low-power silicon photonic transceivers targeting short-reach interconnects serial 56 Gb/s beyond.
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