Scanning probe oxidation of SiC, fabrication possibilities and kinetics considerations
作者： M. Lorenzoni , B. Torre
DOI: 10.1063/1.4825265
关键词: Diffusion 、 Surface diffusion 、 Analytical chemistry 、 Activation energy 、 Semiconductor 、 Optoelectronics 、 Pulse duration 、 Fabrication 、 Oxide 、 Materials science 、 Wide-bandgap semiconductor
摘要: We report the outcome of atomic force microscopy local anodic oxidation experiments on 6H-SiC in air. Oxide thickness can be easily tuned by varying applied voltage and pulse duration. The height aspect ratio single dots produced DC pulses are remarkably higher than what was reported previously, with self limiting heights exceeding 100 nm. propose that diminished density change chemical composition oxide grown SiC respect to under similar condition Si cause a drop activation energy oxanions diffusion within newly formed layer.
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sci-hub.se 参考文章(24)
P.H. Yih, V. Saxena, A.J. Steckl, A Review of SiC Reactive Ion Etching in Fluorinated Plasmas Physica Status Solidi B-basic Solid State Physics. ,vol. 202, pp. 605- 642 ,(1997) , 10.1002/1521-3951(199707)202:1<605::AID-PSSB605>3.0.CO;2-Y
Hyeong Joon Kim, Qingyi Shao, Yoon-Hae Kim, Characterization of low-dielectric-constant SiOC thin films deposited by PECVD for interlayer dielectrics of multilevel interconnection Surface & Coatings Technology. ,vol. 171, pp. 39- 45 ,(2003) , 10.1016/S0257-8972(03)00233-0
Sarit Dhar, Oliver Seitz, Mathew D Halls, Sungho Choi, Yves J Chabal, Leonard C Feldman, None, Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid Journal of the American Chemical Society. ,vol. 131, pp. 16808- 16813 ,(2009) , 10.1021/JA9053465
J. A. Dagata, T. Inoue, J. Itoh, K. Matsumoto, H. Yokoyama, Role of space charge in scanned probe oxidation Journal of Applied Physics. ,vol. 84, pp. 6891- 6900 ,(1998) , 10.1063/1.368986
Yeong-Deuk Jo, Soo-Hyung Seo, Wook Bahng, Sang-Cheol Kim, Nam-Kyun Kim, Sang-Sig Kim, Sang-Mo Koo, Improved local oxidation of silicon carbide using atomic force microscopy Applied Physics Letters. ,vol. 96, pp. 082105- ,(2010) , 10.1063/1.3327832
E. S. Snow, G. G. Jernigan, P. M. Campbell, The kinetics and mechanism of scanned probe oxidation of Si Applied Physics Letters. ,vol. 76, pp. 1782- 1784 ,(2000) , 10.1063/1.126166
Phaedon Avouris, Tobias Hertel, Richard Martel, Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication Applied Physics Letters. ,vol. 71, pp. 285- 287 ,(1997) , 10.1063/1.119521
Marco Chiesa, Ricardo Garcia, Nanoscale space charge generation in local oxidation nanolithography Applied Physics Letters. ,vol. 96, pp. 263112- ,(2010) , 10.1063/1.3459976
Montserrat Calleja, Ricardo Garcı́a, Nano-oxidation of silicon surfaces by noncontact atomic-force microscopy: Size dependence on voltage and pulse duration Applied Physics Letters. ,vol. 76, pp. 3427- 3429 ,(2000) , 10.1063/1.126856
X.N. Xie, H.J. Chung, C.H. Sow, A.T.S. Wee, Nanoscale materials patterning and engineering by atomic force microscopy nanolithography Materials Science & Engineering R-reports. ,vol. 54, pp. 1- 48 ,(2006) , 10.1016/J.MSER.2006.10.001