Ultraviolet photodetectors with Ga-doped ZnO nanosheets structure
作者： Sheng-Joue Young , Yi-Hsing Liu
DOI: 10.1016/J.MEE.2015.07.009
关键词: Materials science 、 Nanosheet 、 Optoelectronics 、 Rise time 、 Doping 、 Aqueous solution 、 Substrate (electronics) 、 Fall time 、 Photodetector 、 Ultraviolet
摘要: In this study, Ga-doped ZnO (GZO) nanosheets were grown on a glass substrate by using aqueous solution method. A GZO nanosheet metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. The average length and diameter of the 2.06µm approximately 20nm, respectively. EDX spectrum determined that sample contains 1.35% at%. UV-to-visible rejection ratio device is 42 when biased at 1V, fabricated UV PD visible-blind with sharp cutoff 370nm. photo-current dark-current constant 14193 1V. transient time constants measured during rise fall 2.45s 4.0s, Display Omitted substrate.A fabricated.The proposed has high fast rise/fall characteristics.
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