作者: Shinjiro Fujitsu Limited Umehara , Hiroshi Fujitsu Limited Ashida , Masahige Fujitsu Limited Sato , Kazuo Fujitsu Limited Kobayashi
DOI:
关键词: Diffusion barrier 、 Materials science 、 Magnetic layer 、 Tunnel junction 、 Ferromagnetism 、 Nuclear magnetic resonance 、 Condensed matter physics 、 Magnetic memory 、 Head (vessel) 、 Layer (electronics)
摘要: A ferromagnetic tunnel junction is disclosed. The includes a pinned magnetic layer, insulating film formed on the and free multilayer body film. first diffusion barrier second layer stacked in this order are ferromagnetically coupled with each other. inhibits additive element contained from diffusing into layer.