Nanoscale wires, nanoscale wire fet devices, and nanotube-electronic hybrid devices for sensing and other applications

摘要: The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, applications. Certain aspects of the are directed such transistors, similar devices. In one set embodiments, a transistor is where nanoscale wire, silicon nanowire, acts channel connecting source electrode drain electrode. some cases, portion exposed an environment that be determined, interior or cytosol cell. A suitable fluidic may extended from into environment, contained within cell, so in electrical communication with via channel. rest coated, e.g., properties reflect behavior with. Other methods making sensors, using kits involving like.