Cyclotron resonance on galliumnitride in fields up to 700T generated by explosive driven flux compression

摘要: Abstract We report on the first successful cyclotron resonance experiment a semiconductor in ultrahigh magnetic fields generated by explosive-driven flux compression. The sample under investigation was p-type cubic GaN layer grown plasma-assisted MBE (0 0 1)-GaAs substrate. have used magnetocumulative generator MC-1 for generating field exceeding 700 T. A CO2 laser with fixed wavelength of λ=10.6 μm as radiation source. transmitted intensity detected use fast HgCdTe-detector. performed at 270 K Faraday geometry oriented parallel to [0 0 1]-direction epitaxial layer. Three distinct transmission minima about 90 T, 270 T and 400–425 T depth few percent only, are clearly resolved. data lower region correspond excellently results derived previously from experiments up 275 T single-turn coil technique. compared directly Landau level scheme Luttinger model.