Grain boundary diffusion of phosphorus in polycrystalline silicon

摘要: The preferential diffusion of phosphorus down grain boundaries in cast polysilicon wafers has been studied using angle polishing followed by measuring junction depth staining or e‐beam†induced current. Data show that at 1040 °C the boundary parameter is 8000 × larger than bulk coefficient (DBulk = 3.3×10−13cm2/s). During normal for 40 min 1040 °C, a was created 1.8 μm within itself, but region extended ∠6 into wafer. Concentration profiles near were calculated and compared to electrical response data similar boundaries. In addition, effects heating polycrystalline without source surface calculated, it concluded lateral inhomogeneities dopant concentration, which may degrade solar cell performance, will exist both with constant diffusion.