Optical emission spectroscopic study on H-assisted plasma for anisotropic deposition of Cu films
作者： J Umetsu , K Inoue , K Koga , M Shiratani
DOI: 10.1088/1742-6596/100/6/062007
关键词: Volumetric flow rate 、 Metastability 、 Electron density 、 Impurity 、 Chemistry 、 Plasma 、 Irradiation 、 Deposition (chemistry) 、 Emission spectrum 、 Analytical chemistry
摘要: We have studied dependence of H? intensity and electron density on the discharge power gas flow rate ratio R = H2/(H2 + Ar), to obtain information a condition bringing about high H flux film surfaces, because irradiation atoms surfaces removes impurities in films enhances deposition rate. The highest intensity, which is obtained for 500 W 3.3%, 10 times as that previous 150 11%. Moreover emission spectra suggest Ar metastable contribute generation 3.3?33%.
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sci-hub.se 参考文章(5)
V. Schulz-von der Gathen, H. F. D�bele, Critical comparison of emission spectroscopic determination of dissociation in hydrogen RF discharges Plasma Chemistry and Plasma Processing. ,vol. 16, pp. 461- 486 ,(1996) , 10.1007/BF01447004
N. Sadeghi, D. W. Setser, M. Touzeau, Reactions of Metastable Argon Atoms with Molecular Hydrogen at 300 and 80 K: Origin of the Ultraviolet Chemiluminescence Journal of Physical Chemistry A. ,vol. 106, pp. 8399- 8405 ,(2002) , 10.1021/JP020014M
Hikaru Kokura, Keiji Nakamura, Ivan P. Ghanashev, Hideo Sugai, Plasma Absorption Probe for Measuring Electron Density in an Environment Soiled with Processing Plasmas Japanese Journal of Applied Physics. ,vol. 38, pp. 5262- 5266 ,(1999) , 10.1143/JJAP.38.5262
Kosuke Takenaka, Masaharu Shiratani, Masao Onishi, Manabu Takeshita, Toshio Kinoshita, Kazunori Koga, Yukio Watanabe, Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition Materials Science in Semiconductor Processing. ,vol. 5, pp. 301- 304 ,(2002) , 10.1016/S1369-8001(02)00108-7
Kosuke Takenaka, Masaharu Shiratani, Manabu Takeshita, Makoto Kita, Kazunori Koga, Yukio Watanabe, Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition Pure and Applied Chemistry. ,vol. 77, pp. 391- 398 ,(2005) , 10.1351/PAC200577020391