Enhancing optical properties of nanocrystalline silicon films with air exposure

摘要: Abstract We report the effect of air exposure and deposition temperatures, T d , on optical property nanocrystalline silicon (nc-Si). The nc-Si thin films were investigated by photoluminescence (PL), absorption, X-ray diffraction (XRD), Fourier-transform infrared (FTIR) absorption Raman scattering. Experimental results show structural change from an amorphous to a phase at =80 °C. In addition, it suggests that low condition leads increase in density SiH-related bonds decrease average grain size, 〈 δ 〉. oxygen peak increases with air-exposure time. PL exhibited two peaks around 1.75–1.78 2.1–2.3 eV. blue shifts consistently 〉 content. first may be related nanocrystallites origin another one due defect-related oxygen. Thus, plasma-enhanced chemical vapor (PECVD) technique we can produce different sizes, causing corresponding luminescent properties. new method processes advantages temperature effective oxidation inexpensive substrates, thus making more suitable for developing low-cost array or flexible optoelectronic devices.