Fletching-shaped Bi4Te3–ZnTe heterostructure nanowires.

作者: Man Suk Song , Yong Kim

DOI: 10.1088/0957-4484/25/50/505605

关键词: OptoelectronicsHeterojunctionSubstrate (electronics)NanowireCatalysisMaterials scienceExcitationLaserShell (structure)Photoluminescence

摘要: We investigated Bi4Te3–ZnTe axial heterostructure nanowires grown by physical vapor transport at the substrate temperature of 450 °C, utilizing ZnTe as source and Bi2Te3 catalyst. The temperatures catalyst materials were individually controlled separating boats. consisted Bi4Te3 segments. segment had an interesting fletching shape with three wings surrounded a ZnO shell. A systematic redshift in nanowire’s photoluminescence was observed excitation laser spot moved from heterojunction toward root segment, attributed to formation deep defect states under Te-rich environment that resulted using instead Bi.

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