Metal-oxide interfacial reactions: encapsulation of Pd on TiO2 (110).

摘要: The model system Pd/TiO2 (110) was used to evaluate the correlation between metal encapsulation and electronic structure of TiO2 crystals. We observed Pd clusters supported on crystals, which were heavily Ar+ sputtered, Nb-doped, or reduced by vacuum annealing. In contrast, not unreduced, undoped, slightly sputtered Our results indicate a strong dependence process electron density in conduction band space charge formed at interfaces. This behavior is controlled initial position Fermi energy level (EF) oxide before contact established. proved that reactions are favored n-type doping large work function metal. On basis this mechanism, we conclude general trends controlling oxide-supported metal-support interaction (SMSI).