Multiband double junction photodiode and related manufacturing process

作者: Massimo Cataldo Mazzillo , Dario Sutera , Antonella Sciuto

DOI:

关键词: Single chipMaterials scienceRealization (systems)WavelengthOptoelectronicsPhotodiodeDouble junctionManufacturing processPhotonReverse bias

摘要: A photodiode structure is based on the use of a double junction sensitive to different wavelength bands magnitude reverse bias applied photodiode. The monolithic integration sensor with functionality in single chip allows realization low cost ultra-compact sensing element packaging useful many applications which require simultaneous or spatially synchronized detection optical photons spectral regions.

参考文章(13)
Seung-Man Park, Jae Mook Kim, Hee Chul Lee, Jae Ryong Yoon, Choong-Ki Kim, Two-color infrared detector and fabrication method thereof ,(1998)
Narayan Dass Taneja, Peter Steven Bui, Manoocher Mansouri Aliabadi, Wavelength Sensitive Sensor Photodiodes ,(2010)
Giorgio Zizak, Flame Emission Spectroscopy: Fundamentals and Applications † Consiglio Nazionale delle Ricerche, Roma (IT). Istituto per la Tecnologia dei Materiali e dei Processi Energetici (TEMPE). ,(2000)
Narayan Dass Taneja, Peter Steven Bui, Manoocher Mansouri Aliabadi, Photodiodes with PN junction on both front and back sides ,(2010)
K.P. Korona, A. Drabińska, K. Pakuła, J.M. Baranowski, Multiband GaN/AlGaN UV Photodetector Acta Physica Polonica A. ,vol. 110, pp. 211- 217 ,(2006) , 10.12693/APHYSPOLA.110.211
Koon-Wing Tsang, Optical Sensing Device ,(2011)
K.P. Korona, A. Drabińska, A. Trajnerowicz, R. Bożek, K. Pakuła, J.M. Baranowski, Tuning of Spectral Sensitivity of AlGaN/GaN UV Detector Acta Physica Polonica A. ,vol. 103, pp. 675- 681 ,(2003) , 10.12693/APHYSPOLA.103.675