Processes and an apparatus for manufacturing high purity polysilicon

摘要: In one embodiment, a method includes feeding at least silicon source gas and polysilicon seeds into reaction zone; maintaining the sufficient temperature residence time within zone so that equilibrium of thermal decomposition is substantially reached to produce an elemental silicon; wherein proceeds by following chemical reaction: 4HSiCl3 ^- -> Si + 3SiCl4 2H2, range between about 600 degrees Celsius 1000 Celsius; c) amount in as result being deposited onto coated particles.