Control of Rectifying and Resistive Switching Behavior in BiFeO3 Thin Films
作者： Stefan Slesazeck , Yao Shuai , Yao Shuai , Heidemarie Schmidt , Danilo Bürger
关键词: Oxygen 、 Resistive switching 、 Optoelectronics 、 Pulsed laser deposition 、 Deposition pressure 、 Thin film 、 Stack (abstract data type) 、 Materials science 、 Oxygen pressure 、 Electrode
摘要: BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of Au/BiFeO3/Pt stack has significantly improved by carefully tuning oxygen pressure during growth, and a large ratio ~4500 achieved. modifies concentration vacancies rectifying behavior Au/BiFeO3 junction, consequently influences whole stack. takes place homogeneously over entire electrode, shows long-term retention.
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