作者: Yuxin Zou , Shaoyuan Li , Wenhui Ma , Zhao Ding , Fengshuo Xi
DOI: 10.1007/S10854-017-7832-3
关键词: Fabrication 、 Materials science 、 Carrier lifetime 、 Oxide 、 Crystalline silicon 、 Nano- 、 Wafer 、 Passivation 、 Trapping 、 Nanotechnology
摘要: Surfaces nano-texturing has triggered off much attention for trapping sunlight to improve the efficiency of solar cells. Silicon nanowire (SiNWs) arrays, with excellent antireflection performance, will hopefully photoelectric conversion cells, however, deteriorated effective carrier lifetime seriously limits enhancement devices. Until now, effect SiNWs structure on remains unexplored. Herein, effects fabrication parameters morphology and textured mc-Si were studied in detail. We also firstly discover that relationship arrays length shows negative exponential relation. Moreover, ethanolic iodine (I–E) concentration, immersion time, surface pre-conditioning (with without native oxide) passivation investigated. It is found more could be achieved shorter length. Meanwhile, HF dipping pretreatment conducive passivation, which attributed Si–Hx termination lower dissociation energy.