Semiconductor Quantum-Well Structures for Optoelectronics–Recent Advances and Future Prospects–
作者： Hiroshi Okamoto
DOI: 10.1143/JJAP.26.315
关键词: Bulk crystal 、 Photoluminescence 、 Optoelectronics 、 Quantum size effect 、 Gallium Arsenide Lasers 、 Semiconductor 、 Field (physics) 、 Electronic equipment 、 Quantum well 、 Chemistry 、 General Engineering 、 General Physics and Astronomy
摘要: Due to the quantum size effect, semiconductor quantum-well structure exhibits many unique material properties which can not be realized in conventional bulk crystals. These are very attractive for novel electronic and optoelectronic devices. This paper reviews studies on physical application of well structures optoelectronics, gives a future forecasting progress this field.
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jsap.jp参考文章(25)
N. K. Dutta, S. G. Napholtz, R. Yen, T. Wessel, T. M. Shen, N. A. Olsson, Long wavelength InGaAsP (λ∼1.3 μm) modified multiquantum well laser Applied Physics Letters. ,vol. 46, pp. 1036- 1038 ,(1985) , 10.1063/1.95750
Seigo Tarucha, Hideki Kobayashi, Yoshiji Horikoshi, Hiroshi Okamoto, Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures Japanese Journal of Applied Physics. ,vol. 23, pp. 874- 878 ,(1984) , 10.1143/JJAP.23.874
K. Woodbridge, P. Blood, E. D. Fletcher, P. J. Hulyer, Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy Applied Physics Letters. ,vol. 45, pp. 16- 18 ,(1984) , 10.1063/1.94986
K. Wakita, Y. Kawamura, Y. Yoshikuni, H. Asahi, S. Uehara, High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells Electronics Letters. ,vol. 21, pp. 951- 953 ,(1985) , 10.1049/EL:19850672
H. Iwamura, T. Saku, T. Ishibashi, K. Otsuka, Y. Horikoshi, Dynamic behaviour of a GaAs-AlGaAs MQW laser diode Electronics Letters. ,vol. 19, pp. 180- 181 ,(1983) , 10.1049/EL:19830125
J. C. Maan, G. Belle, A. Fasolino, M. Altarelli, K. Ploog, Magneto-optical determination of exciton binding energy in GaAs- Ga 1 − x Al x As quantum wells Physical Review B. ,vol. 30, pp. 2253- 2256 ,(1984) , 10.1103/PHYSREVB.30.2253
S. Tarucha, H. Okamoto, Y. Iwasa, N. Miura, Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurement Solid State Communications. ,vol. 52, pp. 815- 819 ,(1984) , 10.1016/0038-1098(84)90012-7
D. A. B. Miller, D. S. Chemla, D. J. Eilenberger, P. W. Smith, A. C. Gossard, W. T. Tsang, Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures Applied Physics Letters. ,vol. 41, pp. 679- 681 ,(1982) , 10.1063/1.93648
Kazuo Nakamura, Tadatoshi Nozaki, Takao Shiokawa, Koichi Toyoda, Susumu Namba, Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam Implantation Japanese Journal of Applied Physics. ,vol. 24, pp. L903- L904 ,(1985) , 10.1143/JJAP.24.L903
T. Venkatesan, B. Wilkens, Y. H. Lee, M. Warren, G. Olbright, H. M. Gibbs, N. Peyghambarian, J. S. Smith, A. Yariv, Fabrication of arrays of GaAs optical bistable devices Applied Physics Letters. ,vol. 48, pp. 145- 147 ,(1986) , 10.1063/1.96978