Low-Driving-Voltage Electro-Optic Modulator With Novel KTa1-xNbxO3 Crystal Waveguides

摘要: We have successfully demonstrated a low-driving-voltage electro-optic (EO) modulator using newly developed KTa1-xNbxO3 (KTN) buried waveguides. prepared high-quality and large KTN crystals. The crystals exhibited quadratic EO coefficient of 4.8×10-15 m2/V2 at 1.55 µm. also very linear effect, for example 600 pm/V biased potential 60 V/mm, which is twenty times larger than the r33 LiNbO3. waveguide layers core cladding were formed by liquid phase epitaxy techniques on propagation loss was less 0.5 dB/cm polarization dependent 0.1 dB/cm. modulators had low Vπ <2.5 V (4.0-V potential, l=6 mm) fast response 3 GHz.