On the mechanism of stabilization of low-field electron emission from dielectric films on metals

摘要: We have carried out a comparative study of the low-field electron emission (LFEE) from range dielectric films such as a-C, i-C, ZnS, SiO/sub 2/ and some others. The results suggest existence common mechanism governing LFEE on metals. It is concluded that slope FN plots in high-current (stable) depends shape interface (metal/dielectric) barrier well thickness band structure film. In this case "working region" emitter not exposed to vacuum, which provides high stability even at mTorr pressures found our experiments.