Silicon Carbide (SIC) - Recent Results in Physics and in Technology
作者： Gerhard Pensl , Reinhard Helbig
DOI: 10.1007/BFB0108286
关键词: Engineering physics 、 Materials science 、 Wide-bandgap semiconductor 、 Fabrication 、 Silicon carbide
摘要: Silicon carbide provides promising physical properties which urge this wide band gap semiconductor to be reinspected as material for a possible use in highpower, high-speed, high-temperature, and high-radiation resistant devices. This demand second look is supported by progress the understanding of properties, recent improvement crystalline quality bulk epitaxially-grown films, development suitable process technologies necessary device fabrication. A brief review results on topics mentioned above given present paper.
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