Intermediate band materials obtained by rapid thermal process of Co-implanted silicon
作者： Jiren Yuan , Haibin Huang , Xinhua Deng , Mingang Gong , Cuicui Liu
DOI: 10.1016/J.MATLET.2017.08.095
关键词: Materials science 、 Phase (matter) 、 Silicon 、 Layer (electronics) 、 Analytical chemistry 、 Solar cell 、 Ion implantation 、 Thermal 、 Impurity 、 Semiconductor
摘要: Abstract The intermediate band solar cell (IBSC) is a kind of novel photovoltaic device with very high efficiency limit. (IB) material key factor for fabricating high-performance IBSC. We explore to prepare IB by Co implantation in silicon followed rapid thermal process (RTP). results show that an successfully formed Si layer. located at about 0.3 eV above the valence edge. Moreover, no impurity phase samples. Our indicated it effective form materials combination ion and RTP method. This approach attractive since technique beneficial fabricate thick layers convenient use mass production.
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sci-hub.se 参考文章(12)
Kaveh Ahadi, Seyed-Mohammad Mahdavi, Ali Nemati, Mohammad Tabesh, Mehdi Ranjbar, Electronic structure and morphological study of BaTiO3 film grown by pulsed-laser deposition Materials Letters. ,vol. 72, pp. 107- 109 ,(2012) , 10.1016/J.MATLET.2011.12.081
N. F. MOTT, Metal-Insulator Transition Reviews of Modern Physics. ,vol. 40, pp. 677- 683 ,(1968) , 10.1103/REVMODPHYS.40.677
H. Castán, E. Pérez, H. García, S. Dueñas, L. Bailón, J. Olea, D. Pastor, E. García-Hemme, M. Irigoyen, G. González-Díaz, Experimental verification of intermediate band formation on titanium-implanted silicon Journal of Applied Physics. ,vol. 113, pp. 024104- ,(2013) , 10.1063/1.4774241
Antonio Luque, Antonio Martí, Elisa Antolín, César Tablero, Intermediate bands versus levels in non-radiative recombination Physica B-condensed Matter. ,vol. 382, pp. 320- 327 ,(2006) , 10.1016/J.PHYSB.2006.03.006
Antonio Luque, Antonio Martí, Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels Physical Review Letters. ,vol. 78, pp. 5014- 5017 ,(1997) , 10.1103/PHYSREVLETT.78.5014
E Antolín, A Martí, J Olea, D Pastor, G González-Díaz, I Mártil, A Luque, None, Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material Applied Physics Letters. ,vol. 94, pp. 042115- ,(2009) , 10.1063/1.3077202
William Shockley, Hans J. Queisser, Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells Journal of Applied Physics. ,vol. 32, pp. 510- 519 ,(1961) , 10.1063/1.1736034
Gerardo L. Araújo, Antonio Martí, Absolute limiting efficiencies for photovoltaic energy conversion Solar Energy Materials and Solar Cells. ,vol. 33, pp. 213- 240 ,(1994) , 10.1016/0927-0248(94)90209-7
M. Menzinger, R. Wolfgang, The Meaning and Use of the Arrhenius Activation Energy Angewandte Chemie International Edition in English. ,vol. 8, pp. 438- 444 ,(1969) , 10.1002/ANIE.196904381
J Olea, M Toledano-Luque, D Pastor, E San-Andrés, I Mártil, G González-Díaz, None, High quality Ti-implanted Si layers above the Mott limit Journal of Applied Physics. ,vol. 107, pp. 103524- ,(2010) , 10.1063/1.3391274