作者: M. Kurth , P.C.J. Graat , E.J. Mittemeijer
DOI: 10.1016/S0169-4332(03)00804-3
关键词: X-ray photoelectron spectroscopy 、 Plasmon 、 Semiconductor 、 Band gap 、 Oxide 、 Spectral line 、 Excitation 、 Analytical chemistry 、 Chemistry 、 Surface plasmon
摘要: Separation of intrinsic and extrinsic intensity contributions to plasmon peaks in X-ray photoelectron spectra free-electron like metals (Me) such as Be, Na, Mg, Al semiconductors Si Ge, necessary for the accurate determination thickness overlayers range a few nanometers, their composition, is difficult because more or less coincident energies. The bulk surface Me 2p can be determined separately from intensities metallic oxidic main peak obtained series recorded unoxidised metal oxidised with different oxide-film thicknesses. In present work, this method was applied XPS Mg spectra. It shown that very sensitive deviations measured data, therefore careful error analysis required, which has been developed work. Furthermore, an alternative based on same theory proposed. This yielded values 0.17 0.06 spectrum relative detection angle 45°. demonstrated excitation according both methods depend oxide-thickness investigated. observation indicates commonly simplifying assumptions oxidation behaviour layer-by-layer growth mechanism and/or development homogeneous oxide MgO properties, composition band gap values, do not hold. pronounced effect neglect films shown.