Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

作者: Massimo V. Fischetti , Deborah A. Neumayer , Eduard A. Cartier

DOI: 10.1063/1.1405826

关键词: High-κ dielectricElectron mobilityPolarizabilitySurface plasmonIonic bondingPhonon scatteringPhononQuasiparticleMaterials scienceCondensed matter physics

摘要: … 1 the effective electron mobility in the inversion layer at the interface between Si and an infinitely thick film of several insulators we have considered SiO2, HfO2, ZrO2, ZrSiO4, AlN, and …

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