Electrical conductivity and the effect of temperature on photoconduction of n-ZnSe/p-Si rectifying heterojunction cells

摘要: Electrical and photoelectrical measurements are made at different temperatures on heterojunction photovoltaic cells fabricated by vacuum deposition of n-ZnSe thin films onto p-Si single crystals. A complete study the current as a function voltage temperature is carried out in order to gain fundamental information trap depth, distribution position Fermi level. The results consistent with space-charge-limited conduction due an exponentially decreasing traps. At low voltages, dark forward direction varies voltage. Under reverse bias, process interpreted terms transition from electrode-limited Schottky emission bulk-limited Poole - Frenkel effect. values thermal activation energy for photoconduction effective density conducting states determined found be 0.22 eV , respectively. These estimated dependence photocurrent constant illumination input power 50 mW .